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Transistor

MMBT3904JD

Transistor

Transistor in a DFN1006-3L package.

DFN1006-3L RoHS Halogen Free AVAILABLE
DFN1006-3L 3D package render
Package — DFN1006-3L
Features
  • Capable of 100 mWatts of Power Dissipation and 200mA Ic
  • Operating and Storage Junction Temperatures: 55°C to 150°C
  • Epoxy Meets UL V-0 Flammability Rating
  • Ultra small Package DFN1006-3L
  • RoHS compliant / Green EMC
Applications
  • Switching Amplifier Applications
Key specifications
Product
MMBT3904JD
Package
DFN1006-3L
Polarity
NPN
Pc (W)
0.1
IC (A)(Max.)
0.2
BVCEO (V)(Min.)
40
BVCBO (V)(Min.)
60
BVEBO (V)(Min.)
6
VCE(sat) (V)(Max.)
0.3
hFE
100~300